mitsubishi semiconductors M54522WP 8-unit 400ma darlington transi stor array with clamp diode jul-2011 pin configuration description M54522WP is an eight-circuit darlington transistor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo > 40v) high-current driving (ic(max) = 400ma) with clamping diodes driving available with pmos ic output applications drives of relays and printers, digit drives of indication elements (leds and lamps), and interfaces between microcomputer output and high-current or high-voltage systems function the M54522WP each have eight circuits consisting of npn darlington transistors. this ics have resistance of 20k between input transistor bases and input pins. a spike-killer clamping diode is provided between each output pin (collector) and com pin. the output transistor emitters are all connected to the gnd pin (pin 9). the collector current is 400ma maximum. collector-emitter supply voltage is 40v maximum. package type 18p4x circuit diagram the eight circuits share the com and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit: ?55 +125 storage temperature t stg v ?0.5 +40 input voltage v i ma 400 clamping diode forward current i f ?20 +75 operating temperature t opr w 1.79 ta = 25 , when mounted on board power dissipation p d v 40 clamping diode reverse voltage v r ma 400 current per circuit output, l output current i c v ?0.5 +40 output , h collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) output input input 2 3 4 5 6 7 8 9 17 16 15 14 13 12 11 10 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 gnd com common 1 18 o1 in1 com output 20k 20k 2k gnd
mitsubishi semiconductors M54522WP 8-unit 400ma darlington transi stor array with clamp diode jul-2011 2 v 30 4 i c < 200ma i c < 400ma duty cycle no more than 7% v 0.5 0 ?l? input voltage v il 8 ?h? input voltage v ih 200 0 duty cycle no more than 30% ma 400 0 collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c v 40 0 output voltage v o max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) v i = 4v, i c = 200ma v 2.4 1.5 ? i f = 400ma clamping diode forward voltage v f a 100 ? ? v r = 40v clamping diode reverse current i r ma 1.8 0.85 0.3 v i = 17v input current i i ? ? 8000 1000 v ce = 4v, i c = 300ma, ta = 25 dc amplification factor h fe 1.6 0.95 ? v 2.4 1.15 ? v i = 8v, i c = 400ma collector-emitter saturation voltage v ce(sat) v ? ? 40 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these valu es are obtained under any conditions. switching characteristics (unless otherwise noted, ta = 25 ? 930 ? turn-off time t off ? 30 ? c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l r l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i n = 0 to 8v (2) input-output conditions : r l = 25 , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes v o open
mitsubishi semiconductors M54522WP 8-unit 400ma darlington transi stor array with clamp diode jul-2011 3 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation p d (w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 output saturation voltage collector current characteristics collector satura tion voltage v ce(sat) (v) collector current i c (ma) duty-cycle- collector current characteristics duty cycle (%) collector current i o (ma) duty cycle (%) collector current i o (ma) duty-cycle- collector current characteristics M54522WP 0 0.5 1.0 1.5 2.0 0 ta=25 ta=-20 ta=75 v i =4v 100 200 300 500 400 0 20 60 80 100 0 100 200 300 500 40 400 0 20 60 80 100 0 100 200 300 500 40 400 10 10 3 10 2 5 7 5 3 2 10 3 10 1 7 5 3 2 10 0 10 4 7 5 3 2 7 5 3 2 v ce =4v 7 5 3 2 7 5 3 2 ta=25 ta=-20 ta=75 10 2 01234 0 v ce =4v 100 200 300 400 ta=25 ta=-20 ta=75 collector current i o (ma) grounded emitter transfer characteristics input voltage v i (v) dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 25 ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 75
mitsubishi semiconductors M54522WP 8-unit 400ma darlington transi stor array with clamp diode jul-2011 4 input current i i( ma) input characteristics input voltage v i (v) 0 0.5 1.0 1.5 2.0 0 100 200 300 400 0 510 2025 0 0.5 1.5 2.0 ta=25 ta=75 15 1.0 ta=25 ta=-20 ta=75 ta=-20 clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma)
mitsubishi semiconductors M54522WP 8-unit 400ma darlington transi stor array with clamp diode jul-2011 5 package outline
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